Time-of-Flight Secondary Ion Mass Spectrometry (GAIA3)

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface-sensitive analytical method that equips with a powerful computer and software for system control and analysis. Focused Ion beam (FIB) with Ultra-high resolution could be used for precise specimen processing which suitable for the preparation of TEM slices particularly. This instrument provides elemental, chemical state and molecular information from surfaces of solid materials. The information about surface layers or thin film structures which provided by TOF-SIMS is important for many industrial and research applications.

Applications

• TOF-SIMS is widely used in material science disciplines such as polymers, pharmaceuticals and semi-conductors

• In principle, TOF-SIMS is applicable to any surface-mediated reaction such as catalysis, sorption, redox and dissolution/precipitation reactions.

• In addition, TOF-SIMS has been applied to geologic materials:

• Organic Films on mineral grain boundaries

• Identification of organic biomarkers in the rock record

• Characterization of organic macromolecules in coal deposits

• Analysis of metals precipitated from magmatic fluids in seafloor hydrothermal systems

• Analysis of interplanetary dust particles

Features

• High mass resolution

• Non-destructive

• Depth profiling

• High sensitivity for trace elements or compounds

Limitations

• Generally, it does not produce quantitative analyses (preferably semi-quantitative analyses)

• Optical capabilities are typically limited, making it difficult to find grains or specific regions of interest for analysis