ZEISS Crossbeam 550 FIB-SEM

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The ZEISS Crossbeam 550 is a high-performance focused ion beam scanning electron microscope (FIB-SEM) designed for advanced imaging, precision micro- and nanofabrication, and site-specific sample preparation. Combining the Gemini 2 field emission SEM column with the ZEISS Ion-sculptor FIB column, the system delivers high-resolution imaging together with fast, accurate ion beam milling on a single platform. In addition, the integrated femtosecond laser processing system enables rapid, deep cross-sectioning of bulk materials, significantly improving workflow efficiency for large-volume material removal and complex sample preparation.

Engineered for demanding analytical workflows, it supports applications including three-dimensional tomography, nanofabrication, and TEM lamella preparation with excellent repeatability and ease of operation.

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Key FeaturesTechnical SpecificationsApplications

Gemini 2 electron optics provides high-throughput, high-resolution SEM imaging with excellent surface detail and analytical performance.
Ion-sculptor FIB technology enables rapid material removal, precise milling, and low-energy polishing while preserving surface and subsurface integrity.
Recipe-driven TEM lamella preparation delivers automated, highly reproducible workflows with consistent results across different users.
Excellent compatibility with a wide range of materials, including metals, ceramics, polymers, semiconductors, and beam-sensitive biological specimens.
Integrated femtosecond laser processing enables fast, deep cross-sectioning of bulk samples, reducing preparation time for large or complex specimens.

Parameter	Specification
Electron Source	Schottky Field Emission Gun (FEG)
SEM Resolution	0.6 nm at 30 kV (STEM mode); 0.7 nm at 15 kV; 1.4 nm at 1 kV
Analytical Resolution	2.3 nm at 20 kV (10 nA, WD 5 mm)
Accelerating Voltage (SEM)	0.02–30 kV
Magnification (SEM)	12×–2,000,000×
Ion Source	UHV Gallium Liquid Metal Ion Source (Ga-LMIS)
FIB Resolution	3 nm at 30 kV; 120 nm at 1 kV; 330 nm at 500 V
Accelerating Voltage (FIB)	0.5–30 kV
Probe Current (FIB)	1 pA–100 nA
Magnification (FIB)	300×–500,000×
Femtosecond Laser Processing System	Maximum Average Power: 10 W at 1 MHz; Maximum Pulse Energy: 10 μJ at 1 MHz; Pulse Duration: <350 fs; Positioning Accuracy: <15 μm

The ZEISS Crossbeam 550 FIB-SEM supports the characterization and processing of a broad range of materials, including metals, ceramics, polymers, semiconductor devices, biological materials, cells, and tissues. By combining high-resolution FE-SEM imaging, precision FIB milling, and rapid femtosecond laser cross-sectioning, the system enables efficient TEM lamella preparation, three-dimensional tomography, micro- and nanostructure machining, high-quality ion beam deposition, and localized structural analysis. These capabilities make it particularly valuable for semiconductor failure analysis, advanced materials research, nanotechnology development, electronic packaging investigation, and life science studies requiring high-resolution structural characterization.

The addition of the ZEISS Crossbeam 550 FIB-SEM significantly strengthens laboratory's capabilities in advanced microscopy, precision sample preparation, and microstructural analysis. The system enables efficient workflows ranging from large-volume material removal to nanoscale specimen preparation and three-dimensional characterization. This comprehensive capability delivers reliable analytical solutions for failure analysis, semiconductor device evaluation, nanofabrication, TEM sample preparation, and multidisciplinary materials research, supporting customers with high-quality characterization services throughout research, development, and manufacturing.

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