Cameca IMS 7f Auto SIMS

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The Cameca IMS 7f Auto is a high-performance dynamic secondary ion mass spectrometer (SIMS) platform designed for ultra-sensitive elemental and isotopic analysis. As the latest generation of IMS xf series, it combines the exceptional sensitivity and high mass resolution of Cameca's magnetic sector SIMS technology with advanced automation to improve analytical consistency, operational efficiency, and laboratory productivity.

IMS 7f Auto is suitable for a wide range of samples, including semiconductors, glasses, metals, ceramics, thin films, bulk materials, and III-V and II-VI compound devices, and it is an ideal solution for both research and high-throughput industrial environments.

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Key FeaturesTechnical SpecificationsApplications

The IMS 7f Auto delivers outstanding depth profiling with high depth resolution and a wide dynamic range. Its high-transmission magnetic sector mass spectrometer, combined with high-density O₂⁺ and Cs⁺ primary ion sources, provides high sputter rates, excellent detection limits, and reliable analysis across a broad range of materials.
A unique optical design supports both direct ion microscopy and scanning microprobe imaging, allowing detailed investigation of elemental distributions with high lateral resolution.
The redesigned in-line primary ion column simplifies primary beam tuning while improving beam current stability. Automated instrument tuning and mass calibration routines reduce operator-dependent variability and enhance analytical consistency. A motorized sample storage chamber with automatic loading and unloading enables efficient sample sequencing and remote operation for improved laboratory throughput.
The automated sample transfer system allows multiple samples to be analyzed consecutively with minimal operator intervention. Fully unattended measurements support continuous 24-hour operation while delivering excellent repeatability (RSD < 0.5 %), high productivity, and consistent analytical performance for routine testing and research applications.

Parameter	Specification
Detection Limits (Si Dopants)	B < 1 × 10¹³ atoms/cm³; As < 1 × 10¹⁵ atoms/cm³; P < 1 × 10¹⁴ atoms/cm³; H < 7 × 10¹⁶ atoms/cm³
Depth Resolution (B in Si)	<1.9 nm/decade
Mass Resolution	>20,000
Lateral Resolution	<1 μm
Primary Ion Beam Energy	O₂⁺: 1–12 keV; Cs⁺: 2–10 keV

The Cameca IMS 7f Auto employs high-density reactive primary ion beams to sputter the sample surface, enabling ultra-sensitive elemental and isotopic analysis with excellent depth resolution. Dynamic SIMS can analyze virtually all elements, from hydrogen to uranium and beyond, making it one of the most powerful techniques for trace element characterization and compositional depth profiling. Typical applications include:

Dopant profiling and impurity analysis in semiconductor materials and devices
Depth profiling of thin films, multilayer structures, and surface coatings
Trace elemental analysis in metals, ceramics, glasses, and insulating materials
Characterization of photovoltaic materials, LEDs, and compound semiconductor devices
High-resolution elemental mapping and ion imaging
Three-dimensional (3D) compositional analysis through sequential depth profiling
Materials research, process development, quality control, and environmental studies

The addition of the Cameca IMS 7f Auto SIMS significantly enhances laboratory's capability for ultra-trace elemental characterization and high-resolution compositional depth analysis. Its combination of exceptional sensitivity, superior mass resolution, automated operation, and advanced imaging enables comprehensive analysis of complex materials with outstanding accuracy and reproducibility, providing high-quality SIMS results for customers in the semiconductor, electronics, advanced materials, energy, and manufacturing industries.

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