NOVA NanoSEM 230 (SEM)

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Note: this service is for Research Use Only and Not intended for clinical use.

The NanoSEM 230 is a field-emission scanning electron microscope (FE-SEM), which attains ultra-high imaging resolution without the specimen size restrictions of a conventional in-lens FE-SEM due to the advanced design of the electron optics. It is a Schottky Field Emission SEM equipped with a motorized stage for easy sample navigation and faster imaging. Great for materials science or any demanding task requiring top of the line performance. The field-emission source allows the user to achieve high imaging resolution at a range of kV, at both low (high-resolution imaging) and high (micro-analytical imaging) currents. Secondary electron (SE) imaging can be undertaken in both field-free and immersion mode for comprehensive low-to-high resolution imaging of a variety of samples. The Nova NanoSEM 230 is configured with a Bruker SDD-EDS detector and can be manually fitted with a backscattered electron detector for the convenient visualization of compositional differences across the specimen surface. For specialty STEM work, a STEM detector is also available on the NanoSEM 230.

Applications

Nova NanoSEM 230 scanning electron microscopy (SEM) is equipped with a super large area of energy disperse spectroscopy (SDD) and a fast electron back-scatter diffraction (EBSD). It can be applied to the morphology observation, elemental composition and distribution detection, structure and orientation analysis for a variety of challenging material, such as metal, nano-particles and powder, nanotubes and nanowires, porous material (silicon, hydroxyapatite), plastic-electronics, glass matrix material, organic material, macromolecule material, diamond film, semiconductor, crystal materials, biological samples, and all kinds of membrane material and cross section.

Specifications

Specifications-TQ-XS
High vacuum resolution	1.0nm @15kv
Low vacuum resolution	1.5nm @10kv; 1.8nm @ 3kV
Acceleration voltage	200V ~ 30kV
Landing voltage	50V～30kV (Electronic deceleration mode)
Beam intensity	0.6pa ~ 100nA
Detector	ETD, TLD, TLD-B, LVD, VCD, CCD
EDS energy resolution	125eV(Mn Kα)
EDS element detection range	Be4-Pu94
EBSD mean angle deviation	MAD≤0.5
EBSD online calibration analysis speed	8×8 binning

Strengths

Ultra-high imaging resolution.
The landing voltage can be less than 100v and provide more surface details under deceleration mode.
Excellent capability of backscattered electron Imaging and component analysis at ultra-low or low voltage.

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