Through our global network of testing experts and analytical equipment including chromatography (HPLC, GC, GC/MS) and atomic absorption spectroscopy (AAS, GFA, FIAS), Our goal is to provide test services as efficiently as possible to maximize our customers' profits. For more information about our services, contact one of our experts today.
Note: this service is for Research Use Only and Not intended for clinical use.
The NanoSEM 230 is a field-emission scanning electron microscope (FE-SEM), which attains ultra-high imaging resolution without the specimen size restrictions of a conventional in-lens FE-SEM due to the advanced design of the electron optics. It is a Schottky Field Emission SEM equipped with a motorized stage for easy sample navigation and faster imaging. Great for materials science or any demanding task requiring top of the line performance. The field-emission source allows the user to achieve high imaging resolution at a range of kV, at both low (high-resolution imaging) and high (micro-analytical imaging) currents. Secondary electron (SE) imaging can be undertaken in both field-free and immersion mode for comprehensive low-to-high resolution imaging of a variety of samples. The Nova NanoSEM 230 is configured with a Bruker SDD-EDS detector and can be manually fitted with a backscattered electron detector for the convenient visualization of compositional differences across the specimen surface. For specialty STEM work, a STEM detector is also available on the NanoSEM 230.
Nova NanoSEM 230 scanning electron microscopy (SEM) is equipped with a super large area of energy disperse spectroscopy (SDD) and a fast electron back-scatter diffraction (EBSD). It can be applied to the morphology observation, elemental composition and distribution detection, structure and orientation analysis for a variety of challenging material, such as metal, nano-particles and powder, nanotubes and nanowires, porous material (silicon, hydroxyapatite), plastic-electronics, glass matrix material, organic material, macromolecule material, diamond film, semiconductor, crystal materials, biological samples, and all kinds of membrane material and cross section.
Specifications-TQ-XS | |
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High vacuum resolution | 1.0nm @15kv |
Low vacuum resolution | 1.5nm @10kv; 1.8nm @ 3kV |
Acceleration voltage | 200V ~ 30kV |
Landing voltage | 50V~30kV (Electronic deceleration mode) |
Beam intensity | 0.6pa ~ 100nA |
Detector | ETD, TLD, TLD-B, LVD, VCD, CCD |
EDS energy resolution | 125eV(Mn Kα) |
EDS element detection range | Be4-Pu94 |
EBSD mean angle deviation | MAD≤0.5 |
EBSD online calibration analysis speed | 8×8 binning |
Ultra-high imaging resolution.
The landing voltage can be less than 100v and provide more surface details under deceleration mode.
Excellent capability of backscattered electron Imaging and component analysis at ultra-low or low voltage.
Do not know how to place an order, please refer to the flow chart shown below.
Submit quotation request |
A technical manager will contact you within 24 hours |
You will review and approve the final price and place an order |
Confirm with you and make the payment |
Instruct you to ship your samples and form |
Analytic report delivery |