CAS 22398-80-7 Indium Phosphide - Catalysts / Alfa Chemistry

IUPAC Name

indiganylidynephosphane

Molecular Weight

145.79g/mol

Molecular Formula

InP

Canonical SMILES

P#[In]

InChI

InChI=1S/In.P

InChI Key

GPXJNWSHGFTCBW-UHFFFAOYSA-N

Melting Point

1062°C

Purity

99.9%

Density

4.81g/cm³

Solubility

Slightly soluble in acid;Slightly soluble in mineral acids

Color Form

Black

Complexity

Covalently-Bonded Unit Count

Decomposition

When heated to decomposition, it may emit toxic fumes of POx

EC Number

244-959-5

Exact Mass

145.877641g/mol

Formal Charge

H-Bond Acceptor

H-Bond Donor

Heavy Atom Count

MeSH Entry Terms

indium phosphide

Monoisotopic Mass

145.877641g/mol

Other Experimental

Dielectric constant: 10.8; Energy gap: 1.3 eV at 25 °C; electron mobility: approx 4600 sq cm/volt-sec. Hole mobility: approx 150 sq cm/volt-sec. Solid solutions of InP can cover the energy gap continuously from 0.3 to 1.3 ev.;Standard molar enthalpy (heat) of formation at 298.15 K = -88.7 kJ/mol; Standard molar Gibbs energy of formation at 298.15 K = -77.0 kJ/mol; Standard molar entropy at 298.15 K = 59.8 J/mol-K; Molar heat capacity at constant pressure at 298.15 K = 45.4 J/mol-K;Can react with moisture or acids to liberate phosphine (PH3); when heated to decomposition, it may emit toxic fumes of POx

Rotatable Bond Count

UNII

SD36LG60G1

Application

Indium Phosphide (InP) serves a crucial role in electronics and optoelectronics due to its exceptional properties. This black crystal semiconductor, available in 6mm pieces or smaller with 99.999% purity, exhibits excellent electron mobility of 4600 cm²/(V·s) and hole mobility of 150 cm²/(V·s) at 300K. Its direct bandgap, which measures 1.42 eV at 0K and 1.35 eV at 300K, lends itself well to applications in high-power and high-frequency electronics, as well as optoelectronic devices like laser diodes. Furthermore, with a dielectric constant of 12.4, InP is an ideal substrate for epitaxial growth of indium gallium arsenide-based optoelectronic devices, making it indispensable for advanced research and development in semiconductor technology. Its low effective mass of 0.077 for electrons and 0.64 for holes further enhances its efficiency in these applications.

April 1, 2025

Essential Indium Phosphide for Advanced Semiconductor Research

Indium Phosphide, with its 99.999% purity and high electron mobility, is vital in our semiconductor research. It's perfect for creating high-frequency electronics and laser diodes, thanks to its direct bandgap.