![{[CurrentData.Name]}](https://resource.alfachemic.com/structure/1303-11-3.gif)
Description
Indium Arsenide is a narrow bandgap semiconductor, making it a good material for electronic devices operating at very high speed (and low power) electronics and for infrared detectors.
Synonyms
InAs; Indium Monoarsenide; Arsinetriylindium(III); indiganylidynearsane
IUPAC Name
indiganylidynearsane
Molecular Weight
189.74
Molecular Formula
InAs
Canonical SMILES
[As]#[In]
InChI
InChI=1S/As.In
InChI Key
RPQDHPTXJYYUPQ-UHFFFAOYSA-N
Melting Point
936-942 ℃
Purity
>99.0%N
Appearance
Gray crystalline solid in various forms - pieces, powder, granules, ingot, wafer, target
Storage
Room temperature.
Complexity
10
Covalently-Bonded Unit Count
1
EC Number
215-115-3
Exact Mass
189.825473g/mol
Formal Charge
0
H-Bond Acceptor
0
H-Bond Donor
0
Heavy Atom Count
2
MDL Number
MFCD00016144
MeSH Entry Terms
InAs;indium arsenide;indium monoarsenide
Monoisotopic Mass
189.825473g/mol
Refractive Index
n20/D 3.51
Rotatable Bond Count
0
UNII
J1A23S0911
