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Zirconium(IV) tert-butoxide

Catalog Number
ACM2081121-1
Product Name
Zirconium(IV) tert-butoxide
Structure
Zirconium(IV) tert-butoxide
CAS
2081-12-1
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Synonyms
Tetrakis(tert-butanolato)zirconium
IUPAC Name
2-Methylpropan-2-ol;zirconium
Molecular Weight
387.71
Molecular Formula
C16H40O4Zr
Canonical SMILES
CC(C)(C)O.CC(C)(C)O.CC(C)(C)O.CC(C)(C)O.[Zr]
InChI
InChI=1S/4C4H10O.Zr/c4*1-4(2,3)5;/h4*5H,1-3H3;
InChI Key
WRMYASGYMABHCC-UHFFFAOYSA-N
Melting Point
3 °C
Flash Point
185 °F
Purity
95%+
Density
0.985 g/mL at 25 °C (lit.)
Appearance
Slightly yellow liquid
Storage
2-8 °C
Complexity
154
Covalently-Bonded Unit Count
5
Exact Mass
386.197359
Formal Charge
0
H-Bond Acceptor
4
H-Bond Donor
4
Heavy Atom Count
21
MDL Number
MFCD00075085
Monoisotopic Mass
386.197359
Rotatable Bond Count
0
Topological Polar Surface Area
80.9 Ų
Application
Zirconium tert-butoxide (ZTB) precursor is used to deposit thin films of Zirconia and other zirconium containing films by atomic layer deposition and chemical vapor deposition methods. Zirconium oxide thin films can also be grown at low temperatures, ranging from 150°C to 300°C, by the presence of moisture along with ZTB or by UV-enhanced atomic layer deposition (UV-ALD) process.
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