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Indium(III) phosphide

Catalog Number
ACM22398807-3
Product Name
Indium(III) phosphide
Structure
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CAS
22398-80-7
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Synonyms
Indium Phosphide Nanoparticles; Indium(III) phosphide; 1312-40-9; Tox21_302280; indiganylidynephosphane; SD36LG60G1; DTXSID3031444; DSSTox_GSID_31444; DSSTox_RID_78875; Indium phosphide, polycrystalline lump;
IUPAC Name
indiganylidynephosphane;
Molecular Weight
145.792g/mol
Molecular Formula
InP;InP;
Canonical SMILES
P#[In];
InChI
InChI=1S/In.P;
InChI Key
GPXJNWSHGFTCBW-UHFFFAOYSA-N;
Melting Point
1070 deg C;
Density
4.81 g/cu cm;
Solubility
Slightly soluble in acid;Slightly soluble in mineral acids;
Color Form
Brittle mass with metallic appearance;Black, cubic crystals;
Complexity
10
Covalently-Bonded Unit Count
1
Decomposition
When heated to decomposition, it may emit toxic fumes of POx;
EC Number
244-959-5
Exact Mass
145.878g/mol
Heavy Atom Count
2
Monoisotopic Mass
145.878g/mol
Other Experimental
Dielectric constant: 10.8; Energy gap: 1.3 eV at 25 deg C; electron mobility: approx 4600 sq cm/volt-sec. Hole mobility: approx 150 sq cm/volt-sec. Solid solutions of InP can cover the energy gap continuously from 0.3 to 1.3 ev.;Standard molar enthalpy (heat) of formation at 298.15 K = -88.7 kJ/mol; Standard molar Gibbs energy of formation at 298.15 K = -77.0 kJ/mol; Standard molar entropy at 298.15 K = 59.8 J/mol-K; Molar heat capacity at constant pressure at 298.15 K = 45.4 J/mol-K;Can react with moisture or acids to liberate phosphine (PH3); when heated to decomposition, it may emit toxic fumes of POx;
Topological Polar Surface Area
0A^2
UNII
SD36LG60G1
Application
Indium(III) phosphide serves as a critical material in the field of electronics and optoelectronics due to its high purity and exceptional properties. Known for its black crystal form, this semiconductor is available in 6mm pieces and smaller, with an impressive purity level of 99.999%. Its noteworthy band gap values of 1.42 eV at 0K and 1.35 eV at 300K contribute to its effectiveness in high-power and high-frequency electronic applications, thanks to its superior electron velocity. Additionally, its direct bandgap makes it ideal for use in optoelectronic devices such as laser diodes. Indium(III) phosphide's high electron mobility of 4600 cm²/(V·s) and hole mobility of 150 cm²/(V·s) at 300K, alongside a dielectric constant of 12.4, support its use as a substrate for epitaxial indium gallium arsenide devices. These combined properties make it an excellent choice for semiconductor research and the development of advanced electronic components.
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