Description
Silicon Carbide is a ceramic material with numerous applications in the manufacturing, automotive, defense, electronics, lighting, and steel industries. Ultra high purity, high purity, submicron and nanopowder forms may be considered.
Synonyms
6-METHOXY-2(3H)-BENZothiazolONE;2(3H)-Benzothiazolone,6-methoxy-(9CI)
IUPAC Name
methanidylidynesilanylium
Molecular Weight
40.1
Molecular Formula
CSi
InChI
1\/CSi\/c1-2
InChI Key
HBMJWWWQQXIZIP-UHFFFAOYSA-N
Boiling Point
Sublimes (NIOSH, 2016);Sublimes;Sublimes
Melting Point
2700°C
Purity
99%|99.9%|99.99%|99.999%
Density
3.22
Solubility
Insoluble (NIOSH, 2016);INSOL IN COLD WATER, HOT WATER, & ACID; SOL IN FUSED POTASSIUM HYDROXIDE;INSOL IN ALCOHOL; SOL IN MOLTEN IRON;Solubility in water: none;Insoluble
Appearance
Light grey powder
Assay
0.99
Color Form
EXCEEDINGLY HARD, GREEN TO BLUISH-BLACK, IRIDESCENT, SHARP CRYSTALS;HEXAGONAL OR CUBIC;Yellow to green to bluish black, iridescent crystals.
Complexity
10
Covalently-Bonded Unit Count
1
EC Number
206-991-8
Exact Mass
39.976927g/mol
Formal Charge
0
H-Bond Acceptor
1
H-Bond Donor
0
Heavy Atom Count
2
ICSC Number
1061
MDL Number
MFCD00049531
MeSH Entry Terms
Crystar;silicon carbide
Monoisotopic Mass
39.976927g/mol
Other Experimental
DIELECTRIC CONSTANT: 7.0; HARDNESS: 9.5; ELECTRON MOBILITY: GREATER THAN 100 SQ CM/VOLT-SEC; HOLE MOBILITY: GREATER THAN 20 SQ CM/VOLT-SEC; BAND GAP ENERGY: 2.8 ELECTRON-VOLTS;SUBLIMES WITH DECOMPOSITION AT 2700 °C;EXCELLENT THERMAL CONDUCTIVITY; ELECTRICALLY CONDUCTIVE; RESISTS OXIDATION AT HIGHER TEMPERATURES
Refractive Index
2.65
Rotatable Bond Count
0
RTECS Number
VW0450000
Stability
Stability
Vapor Pressure
0 mm Hg (approx) (NIOSH, 2016);0 mmHg (approx);0 mmHg (approx)
