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Indium(III) nitride

Catalog Number
ACM25617985-2
Product Name
Indium(III) nitride
Structure
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CAS
25617-98-5
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Synonyms
UNII-D66UAC005A; AC1L3L4E; azanylidyneindigane; Indium nitride (InN); 25617-98-5; Indium(III) nitride, 99.9% trace metals basis;
IUPAC Name
azanylidyneindigane;
Molecular Weight
128.825g/mol
Molecular Formula
InN;InN;
Canonical SMILES
N#[In];
InChI
InChI=1S/In.N;
InChI Key
NWAIGJYBQQYSPW-UHFFFAOYSA-N;
Complexity
10
Covalently-Bonded Unit Count
1
EC Number
247-130-6
Exact Mass
128.907g/mol
H-Bond Acceptor
1
Heavy Atom Count
2
Monoisotopic Mass
128.907g/mol
Topological Polar Surface Area
23.8A^2
Application
Indium(III) nitride serves as a crucial component in the production of optoelectronic devices, including light-emitting diodes, laser diodes, and solar cells. This material, characterized by its wurtzite crystal structure with lattice parameters a=0.353 nm and c=0.570 nm, and a high purity level of 99.999%, demonstrates noteworthy semiconductor and electroluminescence properties. It is typically synthesized by reacting indium oxide (In2O3) with ammonia at elevated temperatures, ensuring its suitability for advanced technological applications.
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