Application
Indium(III) nitride serves as a crucial component in the production of optoelectronic devices, including light-emitting diodes, laser diodes, and solar cells. This material, characterized by its wurtzite crystal structure with lattice parameters a=0.353 nm and c=0.570 nm, and a high purity level of 99.999%, demonstrates noteworthy semiconductor and electroluminescence properties. It is typically synthesized by reacting indium oxide (In2O3) with ammonia at elevated temperatures, ensuring its suitability for advanced technological applications.